Title :
SiC power semiconductor devices for new applications in power electronics
Author :
Planson, Dominique ; Tournier, Dominique ; Bevilacqua, Pascal ; Dheilly, Nicolas ; Morel, Herve ; Raynaud, Christophe ; Lazar, Mihai ; Bergogne, Dominique ; Allard, Bruno ; Chante, Jean-Pierre
Author_Institution :
Ampere Lab. INSA Lyon, Villeurbanne
Abstract :
This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.
Keywords :
high-temperature electronics; power electronics; power semiconductor devices; silicon compounds; wide band gap semiconductors; Ampere laboratory; SiC; high temperature electronics; power electronics; power semiconductor device; Power electronics; Power semiconductor devices; Protection; Semiconductor diodes; Semiconductor materials; Silicon carbide; Switching converters; Temperature; Transformers; Voltage; High temperature electronics; High voltage Device; Power integrated circuit; Power semiconductor device; SiC-device;
Conference_Titel :
Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
Conference_Location :
Poznan
Print_ISBN :
978-1-4244-1741-4
Electronic_ISBN :
978-1-4244-1742-1
DOI :
10.1109/EPEPEMC.2008.4635632
