Characterization of the static and dynamic behavior of a SiC BJT

Silicon carbide (SiC) bipolar junction transistors (BJTs) are interesting candidates for high temperature and for high power applications primarily due to their low conduction losses and fast switching capability. The aim of this paper is to test and evaluate both the static and dynamic characteristics of SiC bipolar junction transistor (developed by TranSiC) rated at 600 V and 6 A at different temperatures. The high power curve tracer 371B has been used to test the DC output characteristics of the device in a temperature range of - 40degC to 175degC. A single pulse switching inductive load circuit has been used to test the dynamic characteristics of the SiC BJT. The experimental results with a normal gate drive circuit, show that the device has a turn on time of less than 0.5 mus and turn off time of less than 0.35 mus under test condition of 300 V, 10 A in an ambient temperature of range - 40degC to 125degC. In addition, the experimental data were analyzed to obtain the device performance parameters like the turn on, off time, transistor gain and switching losses.