Title :
Sequential deposition of Cu(In,Ga)(S,Se)2
Author :
Zweigart, S. ; Walter, Th. ; Köble, Ch ; Sun, S.M. ; Rühle, U. ; Schock, H.W.
Author_Institution :
Inst. fur Phys. Elektronik, Stuttgart Univ., Germany
Abstract :
Several sequential deposition processes for Cu(In,Ga)(S,Se), leading to highly efficient thin film solar cells are described. Secondary phases and interdiffusion determine the growth mechanism of a process consisting of InSex and Cu deposition at a low substrate temperature followed by a high temperature selenization step. Complex phase transitions are involved in the formation of CuInS2 by this inverted process. The presence of a secondary CuS phase leads to a complete recrystallization of the film. Alloys of CuInSe2 with CuInS2 can be formed with the inverted process. Devices based on these absorber layers exhibit efficiencies up to nearly 16% for Cu(In,Ga)Se2 and nearly 12% for CuInS2
Keywords :
chemical interdiffusion; copper compounds; indium compounds; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; vapour deposited coatings; 12 percent; 16 percent; Cu; Cu deposition; Cu(In,Ga)(S,Se)2; Cu(InGa)(SSe)2; Cu(InGa)Se2; CuInS2; CuInSe2; CuS; InSe; InSex deposition; absorber layers; complex phase transitions; film recrystallization; growth mechanism; high efficiency; high temperature selenization; interdiffusion; low substrate temperature; secondary CuS phase; secondary phases; sequential deposition processes; thin film solar cells; Commercialization; Copper; Large-scale systems; Lead; Photovoltaic cells; Power generation; Sputtering; Substrates; Sun; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519810
