Title :
FOM (Figure of Merit) Analysis for Low Voltage Power MOSFETs in DC-DC Converter
Author :
Yoo, Abraham ; Chang, Marian ; Trescases, Olivier ; Wang, Hao ; Ng, Wai Tung
Author_Institution :
Univ. of Toronto, Toronto
Abstract :
FOM is a generally accepted performance and efficiency indicator for power MOSFETs. However, it is found that the traditional FOM can no longer provide a quick measure of the overall device performance for switched mode power supplies, especially for DC-DC converters using the low voltage (sub-lOV) power MOSFETs fabricated in a deep sub-micron CMOS technology. To give a subjective analysis, a new comparison method has been proposed to compare the true overall device performance and power conversion efficiency.
Keywords :
CMOS integrated circuits; DC-DC power convertors; low-power electronics; power MOSFET; switched mode power supplies; switching convertors; DC-DC converters; figure of merit analysis; low voltage power MOSFET; submicron CMOS technology; switched mode power supplies; CMOS technology; DC-DC power converters; Delay; Low voltage; MOSFETs; Parasitic capacitance; Performance analysis; Switched-mode power supply; Switches; Switching converters;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450305
