DocumentCode
2984800
Title
FOM (Figure of Merit) Analysis for Low Voltage Power MOSFETs in DC-DC Converter
Author
Yoo, Abraham ; Chang, Marian ; Trescases, Olivier ; Wang, Hao ; Ng, Wai Tung
Author_Institution
Univ. of Toronto, Toronto
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
1039
Lastpage
1042
Abstract
FOM is a generally accepted performance and efficiency indicator for power MOSFETs. However, it is found that the traditional FOM can no longer provide a quick measure of the overall device performance for switched mode power supplies, especially for DC-DC converters using the low voltage (sub-lOV) power MOSFETs fabricated in a deep sub-micron CMOS technology. To give a subjective analysis, a new comparison method has been proposed to compare the true overall device performance and power conversion efficiency.
Keywords
CMOS integrated circuits; DC-DC power convertors; low-power electronics; power MOSFET; switched mode power supplies; switching convertors; DC-DC converters; figure of merit analysis; low voltage power MOSFET; submicron CMOS technology; switched mode power supplies; CMOS technology; DC-DC power converters; Delay; Low voltage; MOSFETs; Parasitic capacitance; Performance analysis; Switched-mode power supply; Switches; Switching converters;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450305
Filename
4450305
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