Title :
Optical characterization of CuInSe2 grown by molecular beam epitaxy
Author :
Niki, S. ; Makita, Y. ; Yamada, A. ; Shibata, H. ; Fons, P.J. ; Obara, A. ; Kurafuji, T. ; Chichibu, S. ; Nakanishi, H.
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
Abstract :
CuInSe2 epitaxial films with near stoichiometric compositions have been grown on GaAs (001) by molecular beam epitaxy, and radiative recombination processes in these films have been characterized by means of low temperature photoluminescence (PL) spectroscopy. Temperature dependent PL measurements on such epitaxial films have made possible the identification of conduction band to acceptor and donor-acceptor pair transitions. Well-defined emission lines were present near the bandgap, and the emissions at 1.0386 eV and at 1.0311 eV were found to be due to the ground-state free exciton and the excitons bound to neutral acceptors, respectively. The bandgap of CuInSe2 is also determined to be Eg=1.0462 eV at 2 K
Keywords :
conduction bands; copper compounds; electron-hole recombination; energy gap; ground states; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; solar cells; ternary semiconductors; 1.0311 eV; 1.0386 eV; 1.0462 eV; 2 K; CuInSe2; bandgap; conduction band to acceptor transition; donor-acceptor pair transition; epitaxial films; ground-state free exciton; low-temperature photoluminescence spectroscopy; molecular beam epitaxy; near stoichiometric composition; radiative recombination processes; thin film semiconductor; Excitons; Gallium arsenide; Molecular beam epitaxial growth; Optical films; Photoluminescence; Photonic band gap; Radiative recombination; Spectroscopy; Temperature dependence; Temperature measurement;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519825
