• DocumentCode
    298481
  • Title

    Optical characterization of CuInSe2 grown by molecular beam epitaxy

  • Author

    Niki, S. ; Makita, Y. ; Yamada, A. ; Shibata, H. ; Fons, P.J. ; Obara, A. ; Kurafuji, T. ; Chichibu, S. ; Nakanishi, H.

  • Author_Institution
    Electrotech. Lab., Tsukuba, Japan
  • Volume
    1
  • fYear
    1994
  • fDate
    5-9 Dec 1994
  • Firstpage
    132
  • Abstract
    CuInSe2 epitaxial films with near stoichiometric compositions have been grown on GaAs (001) by molecular beam epitaxy, and radiative recombination processes in these films have been characterized by means of low temperature photoluminescence (PL) spectroscopy. Temperature dependent PL measurements on such epitaxial films have made possible the identification of conduction band to acceptor and donor-acceptor pair transitions. Well-defined emission lines were present near the bandgap, and the emissions at 1.0386 eV and at 1.0311 eV were found to be due to the ground-state free exciton and the excitons bound to neutral acceptors, respectively. The bandgap of CuInSe2 is also determined to be Eg=1.0462 eV at 2 K
  • Keywords
    conduction bands; copper compounds; electron-hole recombination; energy gap; ground states; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; solar cells; ternary semiconductors; 1.0311 eV; 1.0386 eV; 1.0462 eV; 2 K; CuInSe2; bandgap; conduction band to acceptor transition; donor-acceptor pair transition; epitaxial films; ground-state free exciton; low-temperature photoluminescence spectroscopy; molecular beam epitaxy; near stoichiometric composition; radiative recombination processes; thin film semiconductor; Excitons; Gallium arsenide; Molecular beam epitaxial growth; Optical films; Photoluminescence; Photonic band gap; Radiative recombination; Spectroscopy; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    0-7803-1460-3
  • Type

    conf

  • DOI
    10.1109/WCPEC.1994.519825
  • Filename
    519825
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=298481