Sub-0.1 dB loss III-Nitride MOSHFET RF Switches

Author

Yang, Z. ; Kudymov, A. ; Hu, X. ; Yang, J. ; Simin, G. ; Shur, M. ; Gaska, R.

Author_Institution

ECSE, Rensselaer Polytech. Inst., Troy, NY

fYear

2008

fDate

23-25 June 2008

Firstpage

291

Lastpage

292

Abstract

The performance of novel RF switching devices using insulating gate III-nitride metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) is demontrated. Initial results show that there is no degradation in the transmitted powers or gate leakage current during the 200+ hours stress with +30 dBm CW input powers. Multi-gate RF switching devices that increase the isolation in the mm-wave frequency range is further developed.

Keywords

III-V semiconductors; aluminium compounds; field effect transistor switches; gallium compounds; high electron mobility transistors; indium compounds; leakage currents; AlInGaN-GaN; gate leakage current; insulating gate III-nitride MOSHFET; loss 0.1 dB; loss III-nitride MOSHFET RF switches; metal-oxide-semiconductor heterostructure field-effect transistors; mm-wave frequency range; multigate RF switching devices; transmitted powers; Communication switching; HEMTs; Insertion loss; MMICs; MODFETs; MOSHFETs; Microwave technology; Radio frequency; Radiofrequency microelectromechanical systems; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800845

Filename

4800845