Title :
Materials and Light-Emitting Diode Properties of Dilute-Nitride GaNP/GaP Heterostructures
Author :
Tu, C.W. ; Odnoblyudov, V.A. ; Chamings, J. ; Ahmed, S. ; Sweeney, S.J. ; Keogh, D.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA
Abstract :
In this paper GaNP/GaP LED structures are much simpler to grow than conventional process, chip processing uses existing technology, and GaNP/GaP LEDs exhibit only a small wavelength shift with injection current. With increasing temperature, the electroluminescence (EL) intensity decreases. Thus, GaNP/GaP LEDs are in the process of being commercialized.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; integrated optoelectronics; light emitting diodes; GaNP-GaP; chip processing; dilute-nitride heterostructure; electroluminescence intensity; electron current injection; light-emitting diode; Electrons; Gallium arsenide; Light emitting diodes; Nitrogen; Photonic band gap; Physics computing; Substrates; Temperature; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800848
