Title :
Binary phase segregation in CuInS2 thin films for efficient solar energy conversion
Author :
Scheer, R. ; Luck, I. ; Hessler, S. ; Sehnert, H. ; Lewerenz, H.J.
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
Abstract :
We investigate Cu-In-S films with Cu/In>1 grown by different preparation techniques such as coevaporation, sulphurization of stacked elemental layers and spray-pyrolysis. Using electron spectroscopy measurements, a preferential segregation of a CuS layer at the front surface of the films can be displayed by the structure of the Cu LVV Auger electron spectrum. This is observed for films grown by coevaporation and sulphurization. The CuS segregation is missing for as-deposited films which are grown by spray-pyrolysis, can however, be induced for these films by additional tempering. The results of the surface analytical study are discussed with respect to the junction performance of CuInS2/CdS/ZnO solar cells
Keywords :
Auger effect; copper compounds; electron spectroscopy; indium compounds; p-n heterojunctions; segregation; semiconductor materials; semiconductor thin films; solar cells; spray coating techniques; spray coatings; ternary semiconductors; vapour deposited coatings; Cu LVV Auger electron spectrum; CuInS2; CuInS2 thin films; CuInS2-CdS-ZnO; CuS; CuS layer; CuS segregation; binary phase segregation; coevaporation; electron spectroscopy measurements; front surface; junction performance; solar energy conversion; spray-pyrolysis; stacked elemental layers sulphurisation; tempering; Electrons; Glass; Performance analysis; Photovoltaic cells; Solar energy; Spraying; Substrates; Surface morphology; Temperature; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519832
