Title :
The low temperature deposition of ICB-grown CuInSe2 thin films [solar cells]
Author :
Sano, Hiroyuki ; Nakamura, Susumu ; Kondo, Ken´chi ; Sato, Katsuaki
Author_Institution :
Stanley Electr. Co. Ltd., Yokohama, Japan
Abstract :
Superstrate-type solar cells were successfully fabricated for the first time using CuInSe2 thin films prepared by the ICB (ionized cluster beam) technique. The substrate temperature was as low as 300°C. The films were characterized by EPMA, X-ray diffraction and PL spectrum. SEM micrographs and photovoltaic properties were also investigated on the solar cells. Results showed nearly stoichiometric composition with grain size about 1 μm. The superstrate-type solar cells showed a conversion efficiency of 2.06%
Keywords :
X-ray diffraction; copper compounds; electron probe analysis; grain size; indium compounds; ionised cluster beam deposition; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; substrates; vapour deposited coatings; 1 mum; 2.06 percent; 300 C; CuInSe2; EPMA; PL spectrum; SEM micrographs; X-ray diffraction; conversion efficiency; grain size; ionized cluster beam deposition; photovoltaic properties; stoichiometric composition; substrate temperature; superstrate-type solar cells; thin film semiconductor; Acceleration; Electron beams; Glass; Photovoltaic cells; Semiconductor films; Sputtering; Substrates; Temperature; Transistors; X-ray diffraction;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519837
