DocumentCode
2984929
Title
A Novel Sub-Micron Semiconductor Gap Fill Integrated Processes
Author
Weng, Chun-Jen
Author_Institution
Leader Univ. Taiwan, Tainan
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
1067
Lastpage
1070
Abstract
To investigate the semiconductor process module integration and technology on optimal integrated lithography processes on sub-micron semiconductor process integration. As duel damascene integration copper process is complicated and margin in semiconductor process. It has been common knowledge that pattern collapse of this type process could be prevented by optimal the process module. Proposed novel semiconductor process on various pattern design and deep pattern aspect ratio effects of sub-micron CMOS semiconductor BEOL (Back-End-Of-Line) structure was included in this study.
Keywords
CMOS integrated circuits; lithography; semiconductor process modelling; BEOL structure; Back-End-Of-Line structure; deep pattern aspect ratio effects; duel damascene integration copper process; integrated lithography process; semiconductor process module integration; sub micron CMOS semiconductor gap fill process; CMOS process; CMOS technology; Fabrication; Integrated circuit interconnections; Integrated circuit modeling; Lithography; Process control; Resists; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450312
Filename
4450312
Link To Document