• DocumentCode
    2984929
  • Title

    A Novel Sub-Micron Semiconductor Gap Fill Integrated Processes

  • Author

    Weng, Chun-Jen

  • Author_Institution
    Leader Univ. Taiwan, Tainan
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    1067
  • Lastpage
    1070
  • Abstract
    To investigate the semiconductor process module integration and technology on optimal integrated lithography processes on sub-micron semiconductor process integration. As duel damascene integration copper process is complicated and margin in semiconductor process. It has been common knowledge that pattern collapse of this type process could be prevented by optimal the process module. Proposed novel semiconductor process on various pattern design and deep pattern aspect ratio effects of sub-micron CMOS semiconductor BEOL (Back-End-Of-Line) structure was included in this study.
  • Keywords
    CMOS integrated circuits; lithography; semiconductor process modelling; BEOL structure; Back-End-Of-Line structure; deep pattern aspect ratio effects; duel damascene integration copper process; integrated lithography process; semiconductor process module integration; sub micron CMOS semiconductor gap fill process; CMOS process; CMOS technology; Fabrication; Integrated circuit interconnections; Integrated circuit modeling; Lithography; Process control; Resists; Silicon; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0637-1
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450312
  • Filename
    4450312