0.1-mW p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes operating at 1.6 μm at room temperature

Author

Suzuno, Mitsushi ; Murase, Shigemitsu ; Koizumi, Tomoaki ; Suemasu, Takashi

Author_Institution

Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba

fYear

2008

fDate

23-25 June 2008

Firstpage

307

Lastpage

308

Abstract

Room temperature 1.6 mum p⁺-Si/beta-FeSi₂/n⁺-Si double heterostructures light-emitting diodes is fabricated on Si(111) substrate using molecular-beam epitaxy. The electroluminescence intensity is improved by increasing the thickness of beta-FeSi₂ active layer and by embedding the beta-FeSi₂ at heavily-doped Si p-n junction, which is making it possible to evaluate the emission power and quantum efficiency for the first time using optical power meter.

Keywords

electroluminescence; elemental semiconductors; iron alloys; light emitting diodes; molecular beam epitaxial growth; p-n junctions; silicon; silicon alloys; Si; Si(111) substrate; Si-FeSi₂-Si; double heterostructures light-emitting diodes; electroluminescence intensity; emission power; heavily-doped Si p-n junction; molecular beam epitaxy; optical power meter; power 0.1 mW; quantum efficiency; temperature 293 K to 298 K; wavelength 1.6 micron; DH-HEMTs; Iron; Light emitting diodes; Molecular beam epitaxial growth; Optical diffraction; Optical films; Optical sensors; Stimulated emission; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800852

Filename

4800852