Title :
0.1-mW p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes operating at 1.6 μm at room temperature
Author :
Suzuno, Mitsushi ; Murase, Shigemitsu ; Koizumi, Tomoaki ; Suemasu, Takashi
Author_Institution :
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba
Abstract :
Room temperature 1.6 mum p+-Si/beta-FeSi2/n+-Si double heterostructures light-emitting diodes is fabricated on Si(111) substrate using molecular-beam epitaxy. The electroluminescence intensity is improved by increasing the thickness of beta-FeSi2 active layer and by embedding the beta-FeSi2 at heavily-doped Si p-n junction, which is making it possible to evaluate the emission power and quantum efficiency for the first time using optical power meter.
Keywords :
electroluminescence; elemental semiconductors; iron alloys; light emitting diodes; molecular beam epitaxial growth; p-n junctions; silicon; silicon alloys; Si; Si(111) substrate; Si-FeSi2-Si; double heterostructures light-emitting diodes; electroluminescence intensity; emission power; heavily-doped Si p-n junction; molecular beam epitaxy; optical power meter; power 0.1 mW; quantum efficiency; temperature 293 K to 298 K; wavelength 1.6 micron; DH-HEMTs; Iron; Light emitting diodes; Molecular beam epitaxial growth; Optical diffraction; Optical films; Optical sensors; Stimulated emission; Substrates; X-ray diffraction;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800852
