Title :
3D Simulations of Width Effect on Performance in NMOSFETs with SiC S/D Stressors and CSEL Linear
Author :
Wang, W.C. ; Chang, S.T. ; Huang, Jacky ; Liao, S.H. ; Lin, C.Y.
Author_Institution :
Nat. Chung Hsing Univ., Taichung
Abstract :
Stress distribution in the Si channel regions of SiC source/drain NMOSFETs with various widths is studied by 3D simulations. The impact of width on performance improvement is analyzed.
Keywords :
MOSFET; semiconductor device models; silicon compounds; 3D simulations; CSEL linear; NMOSFET; S/D stressors; SiC; stress distribution; width effect; Effective mass; Electron mobility; Lattices; MOS devices; MOSFET circuits; Performance analysis; Photonic band gap; Piezoresistance; Silicon carbide; Stress;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450313
