Copper phthalocyanine thin-film transistors with polyimide as dielectric

Author

Zhen, Lijuan ; Shang, Liwei ; Liu, Ming ; Liu, Ge

Author_Institution

Chinese Acad. of Sci., Beijing

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

1075

Lastpage

1077

Abstract

Copper phthalocyanine (CuPc) thin-film transistors (TFTs) have been fabricated using 400 nm polyimide (PI) cured at 250degC as gate dielectric. The root-mean square surface roughness of PI films is 30 Aring. An individual bottom gate, staggered structure was selected to study the device performance. The devices showed p-type electrical characteristics with field-effect mobility, threshold voltage and current on/off ratio values around 1.44 times 10^-3 cm²V^-1s^-1, 1.1 V and 12, respectively.

Keywords

carrier mobility; curing; dielectric materials; field effect transistors; organic semiconductors; photolithography; polymer films; surface roughness; thin film transistors; TFT fabrication; copper phthalocyanine thin-film transistors; curing; current on-off ratio value; field-effect mobility; p-type electrical characteristics; photolithography; polyimide gate dielectric; root-mean square surface roughness; size 400 nm; temperature 250 C; voltage 1.1 V; Copper; Dielectric devices; Dielectric substrates; Electrodes; Gold; Polyimides; Rough surfaces; Surface contamination; Surface roughness; Thin film transistors; electrical characteristics; polyimide; thin-film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450314

Filename

4450314