Title :
Development of ZnO/ZnSe/CuIn1-xGaxSe2 thin-film solar cells with band gap of 1.3 to 1.5 eV
Author :
Ohtake, Yasutoshi ; Kushiya, Katsumi ; Yamada, Akira ; Konagai, Makoto
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
From the standpoint of environmental safety, the establishment of the process to fabricate Cd-free buffer layers is significantly desirable. In this study, ZnSe has been employed as a buffer layer together with a new fabrication method which has been named as an atomic layer deposition (ALD) method in order to deposit ZnSe continuously on a polycrystalline CIGS thin-film absorber in the form of an atomic layer epitaxy (ALE) method. The currently best efficiency of polycrystalline CIGS thin-film solar cells with ZnSe buffer layer by the ALD method is 11.6%
Keywords :
II-VI semiconductors; atomic layer epitaxial growth; copper compounds; energy gap; gallium compounds; indium compounds; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; zinc compounds; 1.3 to 1.5 eV; 11.6 percent; ZnO-ZnSe-CuInGaSe2; ZnO/ZnSe/CuIn1-xGaxSe2 solar cells; atomic layer deposition; atomic layer epitaxy; buffer layer; environmental safety; fabrication process; polycrystalline absorber; thin-film semiconductor; Atomic layer deposition; Buffer layers; Epitaxial growth; Fabrication; Photovoltaic cells; Safety; Sputtering; Transistors; Zinc compounds; Zinc oxide;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519847
