Very Low Drive Voltage Substrate Removed GaAs/A1GaAs Electro-Optic Modulators

Author

Shin, JaeHyuk ; Chang, Yu-Chia ; Dagli, Nadir

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA

fYear

2008

fDate

23-25 June 2008

Firstpage

311

Lastpage

312

Abstract

We report electro-optic modulators with drive voltages as low as 0.3 V at 1.55 mum. The device was realized by removing the growth substrate and utilizes doped quantum wells as electrodes to obtain tight optical confinement and high electrical field. This is more than an order of magnitude reduction in drive voltage from our previous design. The on chip propagation loss was less than 8 dB/cm, 3 dB/cm of which was due to free carrier loss. To our knowledge, this is the lowest drive voltage obtained for any optical modulator.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; modulators; optoelectronic devices; GaAs-AlGaAs; RF photonics; electro-optic modulators; fiber optic communications; instrumentation; linear electro-optic; on chip interconnects; voltage substrate; wavelength 1.55 micron; Arm; Electrooptic modulators; Gallium arsenide; High speed optical techniques; Low earth orbit satellites; Low voltage; Optical interferometry; Optical modulation; Optical waveguides; Quantum capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800854

Filename

4800854