Title :
Very Low Drive Voltage Substrate Removed GaAs/A1GaAs Electro-Optic Modulators
Author :
Shin, JaeHyuk ; Chang, Yu-Chia ; Dagli, Nadir
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA
Abstract :
We report electro-optic modulators with drive voltages as low as 0.3 V at 1.55 mum. The device was realized by removing the growth substrate and utilizes doped quantum wells as electrodes to obtain tight optical confinement and high electrical field. This is more than an order of magnitude reduction in drive voltage from our previous design. The on chip propagation loss was less than 8 dB/cm, 3 dB/cm of which was due to free carrier loss. To our knowledge, this is the lowest drive voltage obtained for any optical modulator.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; modulators; optoelectronic devices; GaAs-AlGaAs; RF photonics; electro-optic modulators; fiber optic communications; instrumentation; linear electro-optic; on chip interconnects; voltage substrate; wavelength 1.55 micron; Arm; Electrooptic modulators; Gallium arsenide; High speed optical techniques; Low earth orbit satellites; Low voltage; Optical interferometry; Optical modulation; Optical waveguides; Quantum capacitance;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800854
