Title :
Characterization of Cu-In-Ga precursors used to form Cu(In,Ga)Se 2 films
Author :
Marudachalam, M. ; Birkmire, R. ; Schultz, J.M. ; Yokimcus, T.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
The stacked precursors for the formation of CuIn1-xGa xSe2 were processed in sequences Cu/In/Ga and Cu/Ga/In for Ga/(Ga+In) ratio ranging from 0.2 to 1.0. The precursors, before and after a 1 hour heat treatment in an Ar atmosphere were found to contain only elemental and binary phases. The precursors were reacted with H2Se or elemental Se at 400°C and 500°C. Reacted precursors contained mixtures of binary phases Cu2-xSe, GaSe, Ga2Se3 and Cu-Ga, and, ternary phases CuInSe2 and CuGaSe2. The reacted precursors were heat treated in an Ar atmosphere and an H2Se atmosphere. The heat treatment in an Ar atmosphere resulted in a single phase CuIn1-x GaxSe2 film, whereas, heat treatment in H 2Se atmosphere improved only the crystallinity of the phases present and does not effect homogenization
Keywords :
copper compounds; gallium compounds; heat treatment; indium compounds; semiconductor growth; semiconductor thin films; ternary semiconductors; vapour deposition; 1 h; 400 C; 500 C; Cu(InGa)Se2; CuIn1-xGaxSe2 films; binary phase; crystallinity; elemental phase; heat treatment; homogenization; physical vapor deposition; ternary phas; Argon; Atmosphere; Chemical vapor deposition; Energy conversion; Heat treatment; Morphology; Substrates; Temperature; X-ray diffraction; X-ray scattering;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519851
