Title :
Heteroepitaxy of CuInxSey of Si and PbSe/CaF 2/Si substrates
Author :
Blunier, S. ; Tiwari, A.N. ; Kessler, K. ; Zogg, H. ; Döbeli, M. ; Filzmoser, M.
Author_Institution :
AFIF, Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
Heteroepitaxial CuInSe2, CuIn2Se3.5 and CuIn3Se5 (CuInxSey) layers have been directly grown on Si(111) substrates by molecular beam epitaxy in order to study their performance as CdS/CIS (single crystal) thin film solar cells. Reflection high energy electron diffraction was used to study the growth kinetics. (112)-oriented epitaxial layers free from impurity phases have been obtained. The positions of (448) X-ray diffraction peaks and vibrational mode frequencies of Raman spectra are used to identify different CuInxSey phases. Rutherford backscattered ion channeling minimum yields of about 12% and 20% have been measured for about 0.5 μm thick CuInSe2 and CuIn3Se5 layers, respectively
Keywords :
Raman spectra; Rutherford backscattering; X-ray diffraction; copper compounds; indium compounds; molecular beam epitaxial growth; semiconductor device testing; semiconductor growth; solar cells; substrates; ternary semiconductors; 0.5 mum; CdS-CuInSe2; CuIn2Se3.5; CuIn3Se5; CuInSe2; PbSe-CaF2-Si; PbSe/CaF2/Si substrates; Raman spectra; Rutherford backscattered ion channeling; Si; X-ray diffraction peaks; growth kinetics; heteroepitaxy; molecular beam epitaxy; performance; reflection high energy electron diffraction; ternary semiconductor growth; thin film solar cells; vibrational mode frequencies; Computational Intelligence Society; Electrons; Epitaxial layers; Kinetic theory; Molecular beam epitaxial growth; Optical reflection; Photovoltaic cells; Substrates; Transistors; X-ray diffraction;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519853
