Title :
Room temperature copper ULSI metallization by low kinetic-energy particle process
Author :
Ohmi, T. ; Saito, T. ; Shibata, T. ; Nitta, T.
Author_Institution :
Dept. of Electron., Tohoku Univ., Sendai, Japan
Abstract :
A room-temperature Cu metallization scheme has been established by a low kinetic-energy particle process, in which epitaxial growth of metal films on Si as well as the formation of ideal metal-silicon contacts without alloying heat cycles has been realized. Cu films deposited on SiO/sub 2/ showed excellent adhesion without an intervening glue layer. Ideal Schottky diode characteristics were obtained. The process is compatible with low-temperature high-throughput one-wafer processing. It is suggested that this process help to establish highly flexible metallization processes for custom VLSI circuit fabrication.<>
Keywords :
VLSI; copper; integrated circuit technology; metallisation; vapour phase epitaxial growth; Cu-Si; Schottky diode characteristics; Si; SiO/sub 2/; ULSI metallization; adhesion; custom VLSI circuit fabrication; epitaxial growth; low kinetic-energy particle process; low-temperature high-throughput one-wafer processing; Adhesives; Alloying; Copper; Epitaxial growth; Metallization; Schottky diodes; Semiconductor films; Temperature; Ultra large scale integration; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location :
Santa Clara, CA, USA
DOI :
10.1109/VMIC.1988.14185
