Title :
Thermal oxidation of CuInSe2: experiment and physico-chemical model
Author :
Boiko, Michael E. ; Medvedkin, Gennadiy A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
The thermal oxidation of CuInSe2 single crystals and bulk polycrystalline plates of n- and p-type conductivity with polished facets have been carried out at elevated temperatures 400 to 610°C in dry oxygen/air atmosphere. All the crystals demonstrated an enhancement in hole conductivity near the surface. Additionally, transparent layers of In2O3 chemical composition have been grown on the surface. Electron-probe analysis, Rutherford backscattering, X-ray diffraction, optical and photoelectric experimental data have provided a basis to develop a physico-chemical model thermal oxidation of CuInSe2 crystals. The model includes the In2O3 compound appearance, VSe , VCu vacancy absorption, Sei, Cui extra atom and CuxSe generation. The chemical reactions are accompanied by arising dislocations and mechanical stresses at the In2O3/CuInSe2 interface
Keywords :
Rutherford backscattering; X-ray diffraction; copper compounds; dislocations; electrical conductivity; electron probe analysis; hole mobility; indium compounds; oxidation; photovoltaic effects; solar cells; ternary semiconductors; 400 to 610 C; CuInSe2 single crystals; In2O3-CuInSe2; In2O3/CuInSe2 interface; Rutherford backscattering; X-ray diffraction; air; bulk polycrystalline plates; chemical composition; chemical reactions; dislocations; dry oxygen; electron-probe analysis; hole conductivity; mechanical stresses; n-type conductivity; optical; p-type conductivity; physico-chemical model; polished facets; thermal oxidation; thin film solar cells; transparent layers; vacancy absorption; Absorption; Atmosphere; Backscatter; Chemicals; Crystals; Optical diffraction; Oxidation; Temperature; Thermal conductivity; X-ray diffraction;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519857
