DocumentCode :
2985120
Title :
Optical properties of SiOx nanostructured films by pulsed-laser deposition
Author :
Chen, X.Y. ; Lu, Y.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume :
3
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
1745
Abstract :
SiOx nanostructured films were formed by pulsed-laser deposition (PLD) of Si. The photoluminescence band at 1.6-2.1 eV shifts with ambient gas pressure, substrate temperature and post-deposition processing, which supports the quantum confinement effect theory.
Keywords :
nanostructured materials; optical films; photoluminescence; pulsed laser deposition; silicon compounds; spectral line shift; thin films; 1 atm; 1.6 to 2.1 eV; Si; SiOx; SiOx films; ambient gas pressure; nanostructured films; optical properties; photoluminescence band; post-deposition processing; pulsed-laser deposition; quantum confinement effect theory; substrate temperature; Gas lasers; Optical films; Optical pulses; Optical sensors; Oxidation; Photoluminescence; Pulsed laser deposition; Semiconductor films; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.202261
Filename :
1573327
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2985120
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