Title :
Evidence for amorphous like behavior in small grain thin film polycrystalline solar cells
Author :
Phillips, J.E. ; Shafarman, W.N. ; Shan, Enze
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
Solar cells based on CdTe, CuInSe2 or the alloys of Cu(In,Ga)Se2 have grain sizes on the order of one micron. It has been suggested that materials with these size grains could have an exponential distribution of localized states within the bandgap similar to amorphous materials such as a-Si:H. The current voltage characteristics of a number of CdTe, CuInSe2 and Cu(In,Ga)Se 2 based solar cells made by various processes and manufacturers are measured as a function of light intensity and temperature. These measurements are then analyzed and compared for evidence of this amorphous like behavior
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; energy gap; grain size; indium compounds; localised states; semiconductor materials; semiconductor thin films; solar cells; ternary semiconductors; CdTe; Cu(In,Ga)Se2; Cu(InGa)Se2; CuInSe2; amorphous like behavior; bandgap; current voltage characteristics; exponential distribution; light intensity; localized states; small grain thin film polycrystalline solar cells; Amorphous materials; Current measurement; Current-voltage characteristics; Exponential distribution; Grain size; Manufacturing processes; Photonic band gap; Photovoltaic cells; Temperature; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519868
