Study of preparing diamond films in presence of magnetic field by the DC plasma

Summary form only given. Diamond films can be formed by a DC plasma (CVD) method. The polycrystalline diamond films can be prepared in a wide range of technology parameters. Knowing the plasma parameters is useful for providing essential information for PCVD and controlling preparation of high quality diamond. These films were characterized by X-ray diffraction and a micro-hardness tester, during the course of diamond growth by DC plasma in the presence of a magnetic field (B=500 G). The characteristics of the plasma have been measured by means of a Langmuir double probe and plasma oscillations methods. Hydrogen and methane gases were used in the gas system. Gases with about 97% (H2) and 3% (CH/sub 4/) were decomposed to the neutral H and C atoms. Due to the DC uniform magnetic field, the degrees of ionization increased, therefore impurities were decreased and temperature of plasma increased. For different pressures and voltages, and also for different magnetic fields, the results were different. We believe that the plasma plays an important role during deposition of diamond. In this experiment diamond films have been prepared on stainless-steel, with discharge voltage 3-5 kV and discharge current 100-500 mA and also we used different type of cathode.