DocumentCode
2985193
Title
Milliampere-range "twice-buried" AlGaAs-heterolasers Fabricated By Low Temperature Liquid Phase Epitaxy
Author
Andreev, V.M. ; Khvostikov, V.P. ; Kazantsev, A.B. ; Larionov, V.R. ; Rumyantsev, V.D.
Author_Institution
A.F. I of Ioffe Physico-Technical Institute Russian Academy of Sciences
fYear
1992
fDate
21-24 June 1992
Keywords
Buffer layers; Coatings; Current measurement; Diodes; Gallium arsenide; Life estimation; Stimulated emission; Temperature dependence; Temperature distribution; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location
Cambridge, MA, USA
Type
conf
DOI
10.1109/DRC.1992.671895
Filename
671895
Link To Document