DocumentCode :
2985193
Title :
Milliampere-range "twice-buried" AlGaAs-heterolasers Fabricated By Low Temperature Liquid Phase Epitaxy
Author :
Andreev, V.M. ; Khvostikov, V.P. ; Kazantsev, A.B. ; Larionov, V.R. ; Rumyantsev, V.D.
Author_Institution :
A.F. I of Ioffe Physico-Technical Institute Russian Academy of Sciences
fYear :
1992
fDate :
21-24 June 1992
Keywords :
Buffer layers; Coatings; Current measurement; Diodes; Gallium arsenide; Life estimation; Stimulated emission; Temperature dependence; Temperature distribution; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
Type :
conf
DOI :
10.1109/DRC.1992.671895
Filename :
671895
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2985193
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