Title :
Realization of Gate-All-Around (GAA) SOI MOSFET Using Replacement Gate Mask
Author :
Theng, A.L. ; Goh, Wang Ling ; Chan, Y.T. ; Tee, K.M. ; Chan, L. ; Ng, C.M.
Abstract :
This paper describes a novel fabrication process of achieving the gate-all-around (GAA) MOSFET device using the replacement gate mask method. In this process, the masking step for the isotropic etch of the bottom gate was replaced by a replacement gate masking step together with a series of processes. The novel technique reduces the process complexity of the GAA SOI MOSFET devices, making it more compatible with the conventional bulk process.
Keywords :
MOSFET; etching; silicon-on-insulator; SOI MOSFET; fabrication process; gate-ail-around; isotropic etch; replacement gate masking; Etching; Fabrication; FinFETs; MOSFET circuits; Manufacturing processes; Pulp manufacturing; Semiconductor device manufacture; Silicon; Space technology; Strips; FinFETs; Gate-All-Around (GAA); Silicon-On-Insulator (SOI) technology;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450327
