Title :
The Characteristics Development of excess Bi2O3-doped 0.65BiO.5KO.5TiO3+0.35BaTiO3 Ceramics
Author :
Yang, Cheng-Fu ; Lin, Ying-Xun ; Cheng, Chien-Min
Author_Institution :
Nat. Univ. of Kaohsiung, Kaohsiung
Abstract :
Recently, there have been widespread discussed about NBT-KBT-BT system, but up to now, relatively few KBT-BT system reports are less found. In this research, piezoelectric materials 0.65 [Bi0.5K0.5TiO3]+0.35[BaTiO3] with excess x wt% Bi2O3 (x=0, 1, 2) are investigated as a function of sintering temperatures. The sintering process is carried out in air for 2 h from 1050degC to 1100degC. The sintering characteristics and dielectric characteristics of 0.65 [Bi0.5K0.5TiO3]+ 0.35 [BaTiO3]+x wt% Bi2O3 ceramics are developed with the aid of SEM, X-ray diffraction, patterns, and dielectric-temperature curves. Dielectric- temperature properties are investigated in the temperature of 30degC~500degC at 10 kHz. From the results of this research, the optimum compositional and sintering condition is X=2 wt% / ST=1100degC, the maximum dielectric constant epsivr is 5818, which is better than the result of sol-gel method (epsivr=1652 at 10 kHz) [1].
Keywords :
X-ray diffraction; barium compounds; bismuth compounds; ferroelectric Curie temperature; permittivity; piezoceramics; potassium compounds; scanning electron microscopy; sintering; (Bi0.5K0.5TiO3-BaTiO3):Bi2O3; SEM; X-ray diffraction; ceramics; dielectric constant; frequency 10 kHz; piezoelectric materials; sintering process; temperature 1050 degC to 1100 degC; temperature 30 degC to 500 degC; time 2 h; Biological materials; Bismuth; Ceramics; Costs; Dielectric constant; Fabrication; Piezoelectric materials; Powders; Solid state circuits; Temperature;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450330
