A Novel Polysilicon Thin-Film Transistor with Multi-Trenched Body for Suppressing Off-State Leakage

Author

Lin, Jyi-Tsong ; Huang, Kuo-Dong

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

1155

Lastpage

1157

Abstract

In this paper, the polysilicon thin-film transistor with multi-trenched body is fabricated and investigated that manifests off-state leakage suppression without degrading on-state current and other electric performances. The reason is that the leakage path can be separated by the multi-trenched body and the carrier scattering through the polysilicon grain-boundary traps can also be minimized. Furthermore, this proposed multi-trenched thin-film transistor can be easily fabricated by trenching and backfilling the buried oxide without destroying the channel film quality. And it is evaluated to reduce more than 50% off-state leakage current compared with the conventional thin-film transistor.

Keywords

leakage currents; silicon compounds; thin film transistors; electric performances; off-state leakage; polysilicon grain-boundary traps; polysilicon thin-film transistor; Conductivity; Degradation; Fabrication; Flat panel displays; Leakage current; Liquid crystal displays; Scanning electron microscopy; Scattering; Thin film transistors; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450333

Filename

4450333