Title :
Selective-area Growth of Gallium Oxide Nanowires:Synthesis, Characterization, and Device Application
Author :
Lo, K.C. ; Wang, H. ; Ho, H.P. ; Chu, P.K.
Author_Institution :
Chinese Univ. of Hong Kong, Shatin
Abstract :
In this paper, we report the selective area synthesis of gallium oxide (Ga2O3) nano-wires on gold patterned gallium arsenide (GaAs) substrate which have been treated by ion implantation. The GaAs substrate was first treated with implantation of acetylene (C2H2) ions, and then followed by coating the surface with a 2nm thick gold film. After rapid thermal anneal (RTA) at 950degC for 15 seconds, Ga2O3 nanowires were found on gold patterned surface. The Ga2O3 nanowires with diameters of 50-500nm were examined by Raman spectroscopy, scanning electron microscopy (SEM), and cathodoluminescence (CL). We also measured the I-V behavior for Ga2O3 material under the excitation by various laser radiations, hence demonstrating its potential applications as UV sensors. In addition, nano-particles of gold were found at the tip of the nano-wires, suggesting that a vapor-liquid-solid (VLS) mechanism was involved.
Keywords :
Raman spectra; annealing; cathodoluminescence; gallium arsenide; gallium compounds; ion implantation; nanowires; scanning electron microscopy; semiconductor growth; semiconductor materials; Ga2O3; Raman spectroscopy; cathodoluminescence; gallium oxide nanowires; gold patterned gallium arsenide substrate; ion implantation; laser radiations; rapid thermal anneal; scanning electron microscopy; selective-area growth; vapor-liquid-solid mechanism; Coatings; Gallium arsenide; Gallium compounds; Gold; Ion implantation; Nanoscale devices; Nanowires; Scanning electron microscopy; Substrates; Surface treatment;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450337
