Title :
Threshold and spectral characteristics of quantum dot lasers fabricated by selective area epitaxy
Author :
Elarde, V.C. ; Coleman, J.J.
Author_Institution :
Micro & Nanotechnol. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
The threshold and spectral characteristics of patterned quantum dot lasers fabricated by selective area MOCVD crystal growth are presented Full three-dimensional confinement of carriers in an engineered quantum structure is demonstrated.
Keywords :
MOCVD; quantum dot lasers; MOCVD crystal growth; carrier confinement; engineered quantum structure; quantum dot lasers; selective area epitaxy; spectral characteristics; three-dimensional confinement; threshold characteristics; Electron beams; Epitaxial growth; Optical materials; Optical waveguides; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Threshold current; US Department of Transportation; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202280
