Title :
Ultralow-Threshold 1.3 μm GaInNAs Triple-Quantum-Well Lasers for High-Speed Operation
Author :
Nakahara, K. ; Adachi, K. ; Kasai, J. ; Kitatani, T. ; Aoki, M.
Author_Institution :
Central Research Laboratory, Hitachi, Ltd. 1-280 Higashi-Koigakubo, Kokubunji, Tokyo, 185-8601, Japan nakahara@crl.hitachi.co.jp
Abstract :
We experimentally demonstrated that a record-low threshold current of 4.3 mA is achieved in long-wavelength, 1.29 μm, GaInNAs-TQW RWG lasers. Moreover, 40-Gb/s direct modulation of the laser is confirmedat 5°C.
Keywords :
Conducting materials; Crystalline materials; Fiber lasers; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical materials; Quantum well lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Optical Communications, 2006. ECOC 2006. European Conference on
Conference_Location :
Cannes, France
Print_ISBN :
978-2-912328-39-7
Electronic_ISBN :
978-2-912328-39-7
DOI :
10.1109/ECOC.2006.4800882
