• DocumentCode
    2985556
  • Title

    Ultralow-Threshold 1.3 μm GaInNAs Triple-Quantum-Well Lasers for High-Speed Operation

  • Author

    Nakahara, K. ; Adachi, K. ; Kasai, J. ; Kitatani, T. ; Aoki, M.

  • Author_Institution
    Central Research Laboratory, Hitachi, Ltd. 1-280 Higashi-Koigakubo, Kokubunji, Tokyo, 185-8601, Japan nakahara@crl.hitachi.co.jp
  • fYear
    2006
  • fDate
    24-28 Sept. 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We experimentally demonstrated that a record-low threshold current of 4.3 mA is achieved in long-wavelength, 1.29 μm, GaInNAs-TQW RWG lasers. Moreover, 40-Gb/s direct modulation of the laser is confirmedat 5°C.
  • Keywords
    Conducting materials; Crystalline materials; Fiber lasers; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical materials; Quantum well lasers; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communications, 2006. ECOC 2006. European Conference on
  • Conference_Location
    Cannes, France
  • Print_ISBN
    978-2-912328-39-7
  • Electronic_ISBN
    978-2-912328-39-7
  • Type

    conf

  • DOI
    10.1109/ECOC.2006.4800882
  • Filename
    4800882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2985556