Title :
Self-aligned lateral field excitation film acoustic resonator with very large electromechanical coupling [FBAR]
Author :
Pang, Wei ; Yu, Hongyu ; Kwon, Jae Wan ; Zhang, Hao ; Kim, Eun Sok
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
This paper describes a self-aligned lateral-field excitation (LFE) film bulk acoustic resonator (FBAR) that exhibits an electromechanical coupling coefficient (Kt2) of 10% at 4.1 GHz, albeit a relatively low Q of 35. The unique features of this resonator include: (1) improved energy trapping structure that does not require an electrode gap close to a micron; and (2) a simple two-mask self-aligned fabrication process that eliminates misalignment between the piezoelectric ZnO and the metal electrode.
Keywords :
Q-factor; acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; zinc compounds; 4.1 GHz; Q factor; ZnO; electrode gap; electromechanical coupling coefficient; energy trapping structure; film bulk acoustic resonator; piezoelectric layer/metal electrode alignment; self-aligned lateral field excitation FBAR; two-mask self-aligned fabrication process; Acoustic waves; Bandwidth; Electrodes; Fabrication; Film bulk acoustic resonators; Mobile communication; Piezoelectric films; Resonant frequency; Resonator filters; Zinc oxide;
Conference_Titel :
Frequency Control Symposium and Exposition, 2004. Proceedings of the 2004 IEEE International
Print_ISBN :
0-7803-8414-8
DOI :
10.1109/FREQ.2004.1418519
