DocumentCode :
2985598
Title :
High Mobility Poly-Si TFTs Fabricated by a Novel Excimer-Laser Crystallization Method
Author :
Shimizu, K. ; Sugiura, O. ; Matsumura, M.
Author_Institution :
Tokyo Institute of Technology
fYear :
1992
fDate :
21-24 June 1992
Keywords :
Crystallization; Electrodes; Etching; Grain size; Laser beams; Semiconductor films; Substrates; Temperature; Thermal conductivity; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
Type :
conf
DOI :
10.1109/DRC.1992.671897
Filename :
671897
Link To Document :
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