Title :
2.05-μm-laser-pumped orientation-patterned gallium arsenide (OPGaAs) OPO
Author :
Schunemann, P.G. ; Setzler, S.D. ; Mohnkern, L. ; Pollak, T.M. ; Bliss, D.F. ; Weyburne, D. ; Hearn, K. O´
Author_Institution :
BAE Syst., Nashua, NH, USA
Abstract :
We achieved the highest average power (0.45 W) and efficiency (20% slope) to date from an OPGaAs OPO. QPM structures >1 mm thick were grown by HVPE on 3-inch diameter multi-grating templates produced by MBE.
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; molecular beam epitaxial growth; optical materials; optical parametric oscillators; optical phase matching; optical pumping; 2.05 mum; GaAs; MBE; gallium arsenide OPO; hydride vapor phase epitaxy; laser-pumped OPO; multigrating templates; orientation-patterned OPO; quasiphase matched structures; Frequency conversion; Gallium arsenide; Gratings; Laser excitation; Molecular beam epitaxial growth; Nonlinear optics; Optical films; Optical pumping; Power lasers; Pump lasers;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202291
