DocumentCode
2985819
Title
Electrically pumped InGaAsP/InP microring optical amplifiers and lasers with surface passivation
Author
Amarnath, Kuldeep ; Grover, Rohit ; Kanakaraju, Subramaniam ; Ho, Ping-Tong
Author_Institution
Lab. for Phys. Sci., College Park, MD, USA
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
1846
Abstract
InGaAsP/InP microring lasers and optical amplifiers providing gain at 1550 nm are demonstrated. The microrings provide about 10 dB of gain in pulsed mode. Sulfur passivation is used to reduce carrier loss to surface recombination.
Keywords
III-V semiconductors; electron beam pumping; gallium arsenide; gallium compounds; indium compounds; laser modes; microcavity lasers; passivation; semiconductor optical amplifiers; sulphur; surface recombination; 10 dB; 1550 nm; InGaAsP-InP; InGaAsP/InP optical amplifiers; carrier loss; electrically pumped optical amplifiers; microring lasers; microring optical amplifiers; pulsed mode; sulfur passivation; surface passivation; surface recombination; Indium phosphide; Laser excitation; Optical amplifiers; Optical pumping; Passivation; Pulse amplifiers; Pump lasers; Semiconductor optical amplifiers; Stimulated emission; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202295
Filename
1573361
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