Title :
Optimization and characterization of reactively sputtered ZnO
Author :
Zafar, S. ; Ferekides, C.S. ; Morel, D.L.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
Highly uniform films of reactively sputtered ZnO:Al with resistivity of 5×10-4 Ω-cm and good optical properties have been produced. The resistivity can be reduced to 1-2×10-4 Ω-cm with some loss in near-IR transmission. Al incorporation drops rapidly with increasing Tss , while carrier concentration (n) increases resulting in increases in doping efficiency of up to ×30. Transport properties are controlled by bombardment induced damage and ionized impurity scattering. The later results in a correlation between mobility and n which combined with the effect of free carriers on optical properties leads to fundamentals-driven design tradeoffs for solar cell use
Keywords :
III-V semiconductors; aluminium; carrier density; carrier mobility; electrical resistivity; impurity scattering; infrared spectra; light transmission; semiconductor doping; semiconductor materials; semiconductor thin films; solar cells; sputter deposition; zinc compounds; 1.2 ohmcm; 5E-4 ohmcm; Al incorporation; ZnO:Al; bombardment induced damage; carrier concentration; carrier mobility; doping efficiency; free carriers; highly uniform films; ionized impurity scattering; near-IR transmission; reactively sputtered films; resistivity; semiconductor; solar cells; Conductivity; Doping; Impurities; Optical design; Optical films; Optical losses; Optical scattering; Photovoltaic cells; Propagation losses; Zinc oxide;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519972
