Title :
A thin film solar cell based on the CuIn3Se5 ordered vacancy compound
Author :
Menezes, S. ; Kessler, J. ; Schmid, D. ; Schock, H.W. ; Nelson, A. ; Matson, R.J.
Author_Institution :
Interphases Res., Thousand Oaks, CA, USA
Abstract :
The special attributes of the CuIn3Se5 material are exploited for an absorber layer in a new thin-film photovoltaic (PV) cell. CuXInYSeZ thin films with x~11% are synthesized by co-evaporation or sequential evaporation. An electrochemical approach, first developed for CuInSe2, is employed to construct an n-CuIn3Se5/p-CuISe3 heterojunction. This approach leads to a remarkably uniform, clean np-heterointerface and a rough surface conducive to light trapping. EPMA, SIMS profiles and XRD analysis examine the CuIn3Se5 films and the CuISe3 overlayer. EBIC and I-V analysis investigate the formation of an electrically active n-CuIn3Se5/p-CuISe3 junction
Keywords :
II-VI semiconductors; copper compounds; indium compounds; p-n heterojunctions; semiconductor materials; semiconductor thin films; solar cells; vapour deposited coatings; CuIn3Se5; CuIn3Se5 ordered vacancy compound; CuIn3Se5-CuISe3; EBIC; EPMA; I-V analysis; SIMS profiles; XRD analysis; absorber layer; clean np-heterointerface; co-evaporation; electrochemical approach; light trapping; n-CuIn3Se5/p-CuISe3 heterojunction; rough surface; sequential evaporation; thin film solar cell; Composite materials; Heterojunctions; Laboratories; Photoconductivity; Photovoltaic cells; Renewable energy resources; Scanning electron microscopy; Surface cleaning; Transistors; X-ray scattering;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519976
