Approaches for stable multi-junction a-Si solar cells

Author

Hishikawa, Y. ; Ninomiya, K. ; Maruyama, E. ; Kuroda, S. ; Terakawa, A. ; Sayama, K. ; Tarui, H. ; Sasaki, M. ; Tsuda, S. ; Nakano, S.

Author_Institution

Center for New Mater. Res., Sanyo Electr. Co. Ltd., Japan

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

386

Abstract

Improvements in the stabilized efficiency of single-junction and multi-junction a-Si solar cells are studied. It has been found that the stabilized efficiency can be improved by suppressing the oxygen and nitrogen content in the i-layer. The defect density and conversion efficiency are strongly correlated with the content of hydrogen having an SiH₂ configuration rather than with the total hydrogen content in a-Si i-layers. A practical estimation method, which considers the variation of the I-V characteristics of each component cell, is also developed in order to optimize multi-junction cells. The world´s highest stabilized efficiency of 8.8% for a single-junction a-Si solar cell and 10.6% for an a-Si/a-SiGe double-junction solar cell are achieved for 1 cm² cells

Keywords

Ge-Si alloys; amorphous semiconductors; elemental semiconductors; hydrogen; p-n junctions; silicon; solar cells; 10.6 percent; 8.8 percent; I-V characteristics; Si:H; Si:H-SiGe:H; SiH₂; SiH₂ configuration; a-Si i-layers; a-Si/a-SiGe double-junction solar cell; a-Si:H; conversion efficiency; defect density; multi-junction a-Si solar cells; single-junction a-Si solar cells; stabilized efficiency; Bonding; Degradation; Hydrogen; Impurities; Material properties; Nitrogen; Optical films; Particle beam optics; Photovoltaic cells; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519981

Filename

519981