DocumentCode :
298593
Title :
Progress in amorphous silicon based multijunction modules
Author :
Arya, R.R. ; Oswald, R.S. ; Li, Y.M. ; Maley, N. ; Jansen, K. ; Yang, L. ; Chen, L.F. ; Willing, F. ; Bennett, M.S. ; Morris, J. ; Carlson, D.E.
Author_Institution :
Thin Film Div., Solarex Corp., Newtown, PA, USA
Volume :
1
fYear :
1994
fDate :
5-9 Dec 1994
Firstpage :
394
Abstract :
Advances in amorphous silicon based alloys and device structure have led to the demonstration of 10.5% initial efficiency and 9.1% stabilized efficiency on 1 ft2 a-Si/a-SiGe tandem junction module. Scale-up to 4 ft2 in pilot production has resulted in the best initial efficiency of 9.75% as measured by NREL, which should result in a stabilized efficiency over 8%. The 4 ft2 modules have an average initial efficiency of 8.75% and a stabilized average efficiency of about 7.5%, as measured by Solarex
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; p-n heterojunctions; silicon; solar cells; 7.5 to 10.5 percent; NREL; Si-SiGe; Solarex; a-Si/a-SiGe tandem junction module; amorphous silicon based alloys; amorphous silicon based multijunction modules; stabilized efficiency; Amorphous silicon; Costs; Degradation; Optical materials; Photonic band gap; Production; Semiconductor materials; Semiconductor thin films; Wavelength measurement; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
Type :
conf
DOI :
10.1109/WCPEC.1994.519982
Filename :
519982
Link To Document :
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