Title :
Application of p-type microcrystalline silicon to a-Si alloy solar cells
Author :
Sannomiya, H. ; Nomoto, K. ; Chida, A. ; Nakata, Y. ; Yamamoto, Y.
Author_Institution :
Energy Conversion Labs., Sharp Corp., Nara, Japan
Abstract :
Detailed studies by the RHEED method have clearly indicated that microcrystalline silicon (μc-Si:H) films prepared with a conventional RF p-CVD system can be deposited from the thickness of 10 nm even on a-SiC:H, a-SiGe:H alloy films and, furthermore, 25 nm-thick films have almost the same crystallinity as the 200 nm thick μc-Si:H film. Application of this μc-Si:H film to the p-layers of a-SiC:H and a-SiGe:H alloy solar cells have led to increases of 20~40 mV in Voc, compared to typical a-SiC:H p-layer cells. Analysis of the diode saturation currents have showed that these increases of Voc were due to the increases of the built-in potential of the cells
Keywords :
CVD coatings; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; hydrogen; reflection high energy electron diffraction; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; 10 nm; 200 nm; 25 nm; RF p-CVD system; RHEED method; Si; Si:H; SiC:H; SiGe:H; Voc; a-Si alloy solar cells; amorphous semiconductor; diode saturation currents; open-circuit voltage; p-type microcrystalline silicon; thin film deposition; Absorption; Crystallization; Hydrogen; Optical films; Photovoltaic cells; Radio frequency; Semiconductor films; Silicon alloys; Steel; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519984
