Title :
The utilization of microcrystalline Si and SiC for the efficiency improvement in a-Si solar cells
Author :
Ma, W. ; Saida, T. ; Lim, C.C. ; Aoyama, S. ; Okamoto, H. ; Hamakawa, Y.
Author_Institution :
Fac. of Eng. Sci., Osaka Univ., Japan
Abstract :
A systematic investigations on the modification of interface potential by introducing doped microcrystalline Si (μc-Si) and it´s carbon alloys (μc-SiC) at the TCO/p a-SiC interface has been made. It has been shown that a remarkable increase of the built-in potential with insertion of these materials. A series of technical data on the improvement of photovoltaic characteristics achieved by employing the microcrystalline materials are presented. The mechanism of improvements is discussed on the basis of systematic diagnostics on the interface properties
Keywords :
amorphous semiconductors; elemental semiconductors; semiconductor materials; silicon; silicon compounds; solar cells; SiC; SiC-Si-Si; TCO/p a-SiC interface; a-Si solar cells; a-SiC/a-Si/n-Si solar cell; built-in potential; doped microcrystalline Si; efficiency improvement; interface potential modification; microcrystalline Si; Circuits; Electrodes; Energy barrier; Heterojunctions; Photovoltaic cells; Photovoltaic systems; Silicon alloys; Silicon carbide; Solar power generation; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519987
