Title :
Preparation of high quality widegap a-Si:H films and its application to a-Si solar cells
Author :
Ashida, Y. ; Ishiguro, N. ; Saitoh, K. ; Miyashita, T. ; Yanagawa, N. ; Tanaka, H. ; Sadamoto, M. ; Fukuda, N.
Author_Institution :
Central Res. Inst., Mitsui Toatsu Chem. Inc., Yokohama, Japan
Abstract :
The novel film formation method of alternately repeating a-Si deposition and hydrogen plasma treatment (ADHT method) was studied. The optical bandgap could be changed from 1.67 to 1.98 eV, the defect densities under 1×1016 cm-3 were obtained at wide range of optical bandgap, and the saturated defect densities after light soaking were about 3×1016 cm-3. Single junction pin a-Si solar cells with i-layer formed by ADHT method were stable to light soaking. Applying the these widegap a-Si films to the i-layer of top cell of 2-stacked tandem solar cells, high open circuit voltage of 1.85 V and high efficiency of 10.5% was attained
Keywords :
amorphous semiconductors; elemental semiconductors; energy gap; hydrogen; plasma CVD; plasma CVD coatings; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; 1.67 to 1.98 eV; 1.85 V; 10.5 percent; ADHT method; Si:H; a-Si:H solar cells; amorphous semiconductor; defect densities; film formation method; hydrogen plasma treatment; light soaking; open circuit voltage; optical bandgap; saturated defect densities; single junction cells; tandem solar cells; widegap thin films; Atomic layer deposition; Bonding; Hydrogen; Optical buffering; Optical films; Optical saturation; Photonic band gap; Photovoltaic cells; Plasma temperature; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519996
