Title :
Degradation of a-Si:H solar cells: new evidence for a bulk effect
Author :
Wyrsch, N. ; Shah, A.
Author_Institution :
Inst. de Microtechnique, Neuchatel Univ., Switzerland
Abstract :
Well defined sequences of nonuniform and uniform degradation steps are applied on several high quality bifacial p-i-n solar cells with different thicknesses of the intrinsic layer. This procedure allows one to separate interface and bulk effects in the degradation of a-Si:H solar cells, or more precisely to separate the influence of the modification of the internal electric field profile (due mainly to effect near the interface) from that of an increase in the deep defect density in the bulk; according to present data the latter is clearly responsible for the major part of a-Si:H solar cell degradation
Keywords :
amorphous semiconductors; defect states; elemental semiconductors; hydrogen; p-n junctions; semiconductor device testing; semiconductor doping; silicon; solar cells; Si:H; a-Si:H solar cells; amorphous semiconductor; bifacial p-i-n solar cells; bulk effect; deep defect density; degradation tests; internal electric field profile; intrinsic layer; Degradation; Electrons; Lighting; Monitoring; PIN photodiodes; Performance evaluation; Photovoltaic cells; Simulated annealing; Strontium; Wavelength measurement;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520028
