Optimum technique of depositing high-rate films by normal PCVD method

Author

Lin, Xuanying ; Lin, Kuixun ; Yu, Yunpeng ; Lam, Y.W. ; Chan, Y.C. ; Lin, Shunhui ; Chan, Y.M.

Author_Institution

Dept. of Phys., Shantou Univ., Guangdong, China

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

638

Abstract

High quality hydrogenated amorphous silicon films with high resistivity (~10¹¹ Ω·cm), high photosensitivity (>10⁵) have been prepared at high deposition rate (>1.0 nm/s) by means of a conventional radio frequency glow discharge apparatus under optimum operation conditions. The results measured on the film properties exhibit that the stability of the high-rate deposited films is more than that of the normal low-rate deposited films

Keywords

amorphous semiconductors; electrical resistivity; elemental semiconductors; hydrogen; photoconducting materials; plasma CVD; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; solar cells; 100 Gohmcm; Si:H; a-Si:H; amorphous semiconductor thin films; deposition rate; optimum operation conditions; photosensitivity; plasma CVD method; radio frequency glow discharge; Amorphous silicon; Automatic control; Electrodes; Feeds; Plasma measurements; Plasma temperature; Pressure control; Probes; Radio frequency; Temperature control;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520042

Filename

520042