Effect of different TCO interfaces on the performances presented by hydrogenated amorphous silicon p-i-n solar cells

Author

Fortunato, Elvira ; Carvalho, Carlos N. ; Bicho, Ana ; Martins, Rodrigo

Author_Institution

Mater. Sci. Dept., New Univ. of Lisboa, Portugal

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

646

Abstract

In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after white light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer

Keywords

Staebler-Wronski effect; amorphous semiconductors; elemental semiconductors; hydrogen; optical saturable absorption; p-n junctions; semiconductor thin films; silicon; solar cells; stability; Si:H; TCO interfaces; a-Si:H film properties; a-Si:H p-i-n homojunction solar cells; dark current density-voltage characteristics; spectral response; stability; transparent conductive electrode; white light-soaking degradation; Amorphous silicon; Artificial intelligence; Degradation; Etching; Materials science and technology; PIN photodiodes; Photovoltaic cells; Pollution measurement; Reflectivity; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520044

Filename

520044