Title :
Testing Flash Memories for Tunnel Oxide Defects
Author :
Mohammad, Mohammad Gh ; Saluja, Kewal K.
Author_Institution :
Kuwait Univ., Safat
Abstract :
Testing non volatile memories for tunnel oxide defects is one of the most important aspects to guarantee cell reliability. Defective tunnel oxide layer in core memory cells can result in various disturb faults. In this paper, we study various defects in the insulating layers of a IT flash cell and analyze their impact on cell performance. Further, we present a test methodology and test algorithms that enable the detection of tunnel oxide defects in an efficient manner.
Keywords :
flash memories; integrated circuit testing; random-access storage; IT flash cell; flash memories testing; nonvolatile memories; tunnel oxide defects; Costs; Fault detection; Flash memory; Nonvolatile memory; Performance analysis; Reliability engineering; Semiconductor device manufacture; Semiconductor device testing; Semiconductor memory; Very large scale integration;
Conference_Titel :
VLSI Design, 2008. VLSID 2008. 21st International Conference on
Conference_Location :
Hyderabad
Print_ISBN :
0-7695-3083-4
DOI :
10.1109/VLSI.2008.41
