DocumentCode
2986420
Title
Testing Flash Memories for Tunnel Oxide Defects
Author
Mohammad, Mohammad Gh ; Saluja, Kewal K.
Author_Institution
Kuwait Univ., Safat
fYear
2008
fDate
4-8 Jan. 2008
Firstpage
157
Lastpage
162
Abstract
Testing non volatile memories for tunnel oxide defects is one of the most important aspects to guarantee cell reliability. Defective tunnel oxide layer in core memory cells can result in various disturb faults. In this paper, we study various defects in the insulating layers of a IT flash cell and analyze their impact on cell performance. Further, we present a test methodology and test algorithms that enable the detection of tunnel oxide defects in an efficient manner.
Keywords
flash memories; integrated circuit testing; random-access storage; IT flash cell; flash memories testing; nonvolatile memories; tunnel oxide defects; Costs; Fault detection; Flash memory; Nonvolatile memory; Performance analysis; Reliability engineering; Semiconductor device manufacture; Semiconductor device testing; Semiconductor memory; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2008. VLSID 2008. 21st International Conference on
Conference_Location
Hyderabad
ISSN
1063-9667
Print_ISBN
0-7695-3083-4
Type
conf
DOI
10.1109/VLSI.2008.41
Filename
4450496
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