• DocumentCode
    2986455
  • Title

    An avionics integrity mechanical analysis

  • Author

    Rittinger, Thomas E.

  • Author_Institution
    Wright-Patterson AFB, OH, USA
  • fYear
    1988
  • fDate
    23-27 May 1988
  • Firstpage
    1557
  • Abstract
    In silicon power transistor applications, thermal cycling of the transistor may activate a failure mechanism called thermal fatigue. This phenomenon is caused by the mechanical stresses set up by the differential in the thermal expansions of the various materials used in the assembly of the transistor and heat sink. Thermal fatigue often results in cracking of the silicon pellet or fatigue of the silicon mounting interface. The author considers the avionics integrity process along with an example of a mechanical analysis using the avionics integrity approach. The example involves the determination of the stress-strain relationships found in power transistors and an experimental approach for determining cycles to failure
  • Keywords
    aircraft instrumentation; failure analysis; power transistors; reliability; Si; avionics integrity mechanical analysis; cracking; failure; failure mechanism; mechanical stresses; mounting interface; power transistor; stress-strain relationships; thermal cycling; thermal expansions; thermal fatigue; Aerospace electronics; Assembly; Failure analysis; Fatigue; Maintenance; Power transistors; Production; Silicon; Stress; Thermal force;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace and Electronics Conference, 1988. NAECON 1988., Proceedings of the IEEE 1988 National
  • Conference_Location
    Dayton, OH
  • Type

    conf

  • DOI
    10.1109/NAECON.1988.195217
  • Filename
    195217