DocumentCode
2986455
Title
An avionics integrity mechanical analysis
Author
Rittinger, Thomas E.
Author_Institution
Wright-Patterson AFB, OH, USA
fYear
1988
fDate
23-27 May 1988
Firstpage
1557
Abstract
In silicon power transistor applications, thermal cycling of the transistor may activate a failure mechanism called thermal fatigue. This phenomenon is caused by the mechanical stresses set up by the differential in the thermal expansions of the various materials used in the assembly of the transistor and heat sink. Thermal fatigue often results in cracking of the silicon pellet or fatigue of the silicon mounting interface. The author considers the avionics integrity process along with an example of a mechanical analysis using the avionics integrity approach. The example involves the determination of the stress-strain relationships found in power transistors and an experimental approach for determining cycles to failure
Keywords
aircraft instrumentation; failure analysis; power transistors; reliability; Si; avionics integrity mechanical analysis; cracking; failure; failure mechanism; mechanical stresses; mounting interface; power transistor; stress-strain relationships; thermal cycling; thermal expansions; thermal fatigue; Aerospace electronics; Assembly; Failure analysis; Fatigue; Maintenance; Power transistors; Production; Silicon; Stress; Thermal force;
fLanguage
English
Publisher
ieee
Conference_Titel
Aerospace and Electronics Conference, 1988. NAECON 1988., Proceedings of the IEEE 1988 National
Conference_Location
Dayton, OH
Type
conf
DOI
10.1109/NAECON.1988.195217
Filename
195217
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