DocumentCode :
2986466
Title :
Memory Yield Improvement through Multiple Test Sequences and Application-Aware Fault Models
Author :
Kokrady, Aman ; Ravikumar, C.P. ; Chandrachoodan, Nitin
Author_Institution :
Texas Instrum. India, Chennai
fYear :
2008
fDate :
4-8 Jan. 2008
Firstpage :
169
Lastpage :
174
Abstract :
In this paper, we propose a way to improve the yield of memory products by selecting the appropriate test strategy for memory Built- in Self-Test (BIST). We argue that by testing the memory through a sequence of test algorithms which differ in their fault coverage, it is possible to bin the memory into multiple yield bins and increase the yield and product revenue. Further, the test strategy must take into consideration the usage model of the memory. Thus, a number of video and audio buffers are used in sequential access mode, but are overtested using conventional memory test algorithms which model a large number of defects which do not impact the operation of the buffers. We propose a binning strategy where memory test algorithms are applied in different order of strictness such that bins have a specific defect / fault grade. Depending on the applications some of these bins need not be discarded but sold at a lower price as the functionality would never catch the fault due to its usage of memory. We introduce the notion of a test map for the on-chip memories in a SoC and provide results of yield simulation on two specific test strategies called "Most Strict First" and "Least Strict First". Our simulations indicate that significant improvements in yield are possible through the adoption of the proposed technique. We show that the BIST controller area and run-time overheads also reduce when information about the usage model of the memory, such as sequential access, is exploited.
Keywords :
built-in self test; fault simulation; integrated circuit yield; semiconductor storage; system-on-chip; SoC; application-aware fault model; binning strategy; least strict first; memory bin; memory built- in self-test; memory test algorithms; memory yield improvement; most strict first; multiple test sequence; multiple yield bin; Built-in self-test; Circuit faults; Circuit testing; Digital signal processors; Integrated circuit yield; Logic testing; Microprocessors; Random access memory; Read-write memory; Signal processing algorithms;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 2008. VLSID 2008. 21st International Conference on
Conference_Location :
Hyderabad
ISSN :
1063-9667
Print_ISBN :
0-7695-3083-4
Type :
conf
DOI :
10.1109/VLSI.2008.115
Filename :
4450498
Link To Document :
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