A 1.2 V, Inductorless, Broadband LNA in 90 nm CMOS LP

Author

Vidojkovic, Maja ; Sanduleanu, Mihai ; van der Tang, Johan ; Baltus, Peter ; Van Roermund, Arthur

Author_Institution

Tech. Univ. of Eindhoven, Eindhoven

fYear

2007

fDate

3-5 June 2007

Firstpage

53

Lastpage

56

Abstract

This paper presents a novel broadband, inductorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1 GHz. The measured power gain of the LNA is 16 dB at 1 GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5 dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300 MHz up to 1 GHz. The current consumption is 14 mA from a 1.2 V supply. The circuit is designed in a baseline CMOS 90 nm low power (LP) process.

Keywords

CMOS integrated circuits; feedback amplifiers; low noise amplifiers; low-power electronics; wideband amplifiers; CMOS LP; current 14 mA; current consumption; frequency 0.4 GHz to 1 GHz; frequency 300 MHz to 1 GHz; frequency 900 MHz; inductorless broadband LNA; low power process; noise figure 3.5 dB; resistive-feedback; size 90 nm; voltage 1.2 V; Bandwidth; Broadband amplifiers; CMOS process; Circuit topology; Digital video broadcasting; Feedback; Noise figure; Noise measurement; Radio frequency; TV; Low Noise Amplifiers; broadband; multi-band; multi-mode;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380831

Filename

4266379