Title :
A 3.5 GHz 25 W Silicon LDMOS RFIC power amplifier for WiMAX applications
Author :
Cassan, C. ; Gola, P.
Author_Institution :
Freescale Semicond. Inc., Toulouse
Abstract :
This paper presents a 25 W Silicon LDMOS 2 stage RF integrated circuit (IC) designed for WiMAX at 3.5 GHz. This IC is capable of handling the full 3.3 to 3.8 GHz band with flat RF performances. This paper details RF performances in the 3.4 to 3.6 GHz band. Under a 1 tone CW stimulus, this power amplifier delivers 29 W with a power added efficiency of 36.7% and 26 dB linear gain. Under a 1 carrier WiMAX signal and at 36 dBm average output power, the device has a RCE better than -33.5 dBc and a 14% drain efficiency typical.
Keywords :
MOS integrated circuits; WiMax; microwave field effect transistors; microwave integrated circuits; microwave power amplifiers; power MOSFET; wideband amplifiers; WiMAX application; broadband amplifiers; frequency 3.5 GHz; linear amplifiers; power 25 W; power 29 W; silicon LDMOS RFIC power amplifier; Broadband amplifiers; Power amplifiers; Power generation; Pulse circuits; Pulse measurements; Radio frequency; Radiofrequency integrated circuits; Silicon; Space vector pulse width modulation; WiMAX; Silicon; broadband amplifiers; integrated circuit; linear amplifiers; power amplifiers;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380839
