Author :
Grewing, C. ; Van Waasen, S. ; Bokinge, B. ; Einerman, W. ; Emericks, A. ; Engberg, R. ; Hedenäs, C. ; Hellberg, H. ; Hjelm, M. ; Irmscher, S. ; Johansson, T. ; Lann, A.-M. ; Lewis, M. ; Li, B. ; Pettersson, O. ; Simbürger, W. ; Theil, D. ; Thüringer, R.
Abstract :
A fully integrated transceiver in a 0.13 mum CMOS technology including on-chip power amplifier (PA) for digital cordless telephone standards is presented. The PA exhibits an output power of POUT = 26 dBm. The implemented frequency synthesizer shows robustness against PA coupling, excellent phase noise performance and fast settling time. The fully integrated receiver deploys a low intermediate frequency (IF) architecture with a very low noise, low current consumption front-end and a complex band pass filter for channel selection. The receiver is measured to achieve a sensitivity level of P0.1% = -96 dBm. The transceiver uses ITX = 35 mA in transmit mode and IRX = 25 mA in receive mode from a regulated VTRX = 1.5 V supply. The PA shows a power added efficiency (PAE) of more than 30% at a VPA = 2.5 V direct-connect-to-battery supply. The transceiver is developed as a part of a complete system-on-chip (SoC) cordless phone.
Keywords :
CMOS integrated circuits; cordless telephone systems; frequency synthesizers; power amplifiers; system-on-chip; transceivers; CMOS radio; band pass filter; frequency synthesizer; integrated transceiver; power amplifier; system-on-chip cordless phone; CMOS technology; Frequency synthesizers; Noise robustness; Phase noise; Power amplifiers; Power generation; Radiofrequency amplifiers; System-on-a-chip; Telephony; Transceivers; CMOS integrated circuits; SoC; cordless telephone systems; frequency locked loops; power amplifiers; receivers; transmitters;
