Title :
Exploiting Variable Cycle Transmission for Energy-Efficient On-Chip Interconnect Design
Author :
Kalyan, T. Venkata ; Mutyam, Madhu ; Rao, P. Vijaya Sankara
Author_Institution :
IIT Hyderabad, Hyderabad
Abstract :
As on-chip interconnect in deep-submicron designs contribute to the system-wide power consumption, minimization of interconnect power consumption has become one of the important design issues in deep-submicron technologies. As transition activity mainly determines the interconnect power consumption, several bus encoding techniques have been proposed to minimize the activity. Unlike the existing low-power or energy-efficient bus encoding techniques, in this paper, we propose a scheme which exploits both dynamic voltage scaling and variable cycle transmission mechanisms for minimizing on-chip interconnect energy consumption. We transmit data using variable cycle transmission method and, based on the delay savings achieved through variable cycle transmission method at regular intervals, scale the voltage and frequency to obtain significant energy savings. Using our technique for a 5 mm interconnect wire we achieved energy savings of 30% and 45% over the base case in the address bus and data bus, respectively. Our technique also reduces the energy-delay-product by 34% and 52% for address bus and data bus, respectively.
Keywords :
integrated circuit interconnections; low-power electronics; microprocessor chips; address bus; bus encoding techniques; data bus; deep-submicron designs; dynamic voltage scaling; energy-delay-product; energy-efficient on-chip interconnect design; interconnect power consumption; microprocessor; system-wide power consumption; transition activity; variable cycle transmission; Clocks; Delay; Dynamic voltage scaling; Encoding; Energy consumption; Energy efficiency; Frequency; Power system interconnection; System-on-a-chip; Voltage control;
Conference_Titel :
VLSI Design, 2008. VLSID 2008. 21st International Conference on
Conference_Location :
Hyderabad
Print_ISBN :
0-7695-3083-4
DOI :
10.1109/VLSI.2008.15